Digital Audio MOSFET
PD - 96174
DIGITAL AUDIO MOSFET
Features
• Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSO...
Description
PD - 96174
DIGITAL AUDIO MOSFET
Features
Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low QG and QSW for Better THD and Improved Efficiency Low QRR for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Can Deliver up to 300W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
G S D
IRFB5620PbF
Key Parameters
200 60 25 9.8 2.6 175
D
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
V m: nC nC Ω °C
G
D
S
TO-220AB
D S
G
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
...
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