ST 2SA1024
PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two ...
ST 2SA1024
PNP Silicon Epitaxial Planar
Transistor for high voltage applications. The
transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25? )
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
Value
Unit
-VCBO
150
V
-VCEO
150
V
-VEBO
5
V
- IC
50
mA
IE
50
mA
Ptot
1000
mW
Tj
150
OC
TS
-55 to +150
OC
G S P FORM A IS AVAILABLE
РАДИОТЕХ
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru
®
ST 2SA1024
Characteristics at Tamb=25 OC
Symbol
Min.
DC Current Gain
at -VCE=5V, -IC=10mA
Current Gain Group O
hFE
70
Y
hFE
120
Collector Cutoff Current
at -VCB=150V Emitter Cutoff Current
-ICBO
-
at -VEB=5V Gain Bandwidth Product
-IEBO
-
at -VCE=30V, -IC=10mA Output Capacitance
fT
-
at -VCB=10V, f=1MHz Base Emitter Voltage
COB
-
at -VCE=5V, -IC=30mA Collector Saturation Voltage
-VBE
-
at -IC=10mA, -IB=1mA
-VCE(sat)
-
Typ.
120 4 -
G S P FORM A IS AVAILABLE
Max.
140 240 0.1 0.1
5 0.9 0.8
Unit
µA µA MHz pF V V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
®
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
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