HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel...
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
10A, 400V and 500V VCE(ON): 2.5V Max. TFALL: 1µs, 0.5µs Low On-State Voltage Fast Switching Speeds High Input Impedance Anti-Parallel Diode
Applications
Power Supplies Motor Drives Protective Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar
transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND 10N40C1D 10N40E1D 10N50C1D 10N50E1D
G
E
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTP10N40C1D HGTP10N40E1D 400 400 ±20 17.5 10 75 0.6 -55 to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 UNITS V V V A W W/oC oC
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ....