HGTP10N40F1D

HGTP10N40F1D, HGTP10N50F1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features 10A, 400V and 500V Latch Free Operation Typical Fall Time < 1.4µs High Input Impedance Low Conduction Loss Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP10N40F1D HGTP10N50F1D PACKAGE TO-220AB TO-220AB BRAND 10N40F1D 10N50F1D Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E NOTE: When ordering, use the entire part number Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP10N40F1D 400 400 12 10 12 ±20 16 10 75 0.6 -55 to +150 260 HGTP10N50F1D 500 500 12 10 12 ±20 16 10 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . ...