75N05

SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 50 rDS(on) (W) 0.006 ID (A) 75 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N05-06 SUB75N05-06 N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR Symbol VGS Limit "20 75a 70 240 75 280 250c 3.7 –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70292 S-05110—Rev. E, 10-Dec-01 www.vishay.com (TO-263)d RthJA RthJC Symbol Limit 40 62.5 0.6 Unit Free Air (TO-220AB) _C/W 2-1 Free Datasheet http://www.datasheet4u.net/ SUP/SUB75N05-06 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V, TJ = 125_C VDS = 50 V, VGS = 0 V...