JCS7N60

R N N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 600 V 1.2 Ω 54 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 23pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 23pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS7N60S-O-S-N-B JCS7N60B-O-B-N-B JCS7N60C-O-C-N-B JCS7N60F-O-F-N-B JCS7N60F-R-F-N-B Halogen Free NO NO NO NO YES Device Weight 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) 2.20 g(typ) Marking JCS7N60S JCS7N60B JCS7N60C JCS7N60F JCS7N60F Package TO-263 TO-262 TO-220C TO-220MF TO-220MF Packaging Tube Tube Tube Tube Tube ：201112B 1/12 Free Datasheet http://www.datasheet4u.net/ R JCS7N60 ABSOLUTE RATINGS (Tc=25℃) JCS7N60S/B/C 600 7.0 4.4 28 ±30 420 7.0 14.7 5.5 147 48 JCS7N60F 600 7.0* 4.4* 28* Unit V A A A V mJ A mJ V/ns W Value Parameter － Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM VGSS -continuous （ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） EAS Single Pulsed Avalanche Energy （note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Current（note 1） IAR EAR （ 3） dv/dt Peak Diode Recovery dv/dt（note 3） PD TC=25℃ -Derate above 25℃ Temperature TJ，TSTG Power Dissipation 1.18 0.38 W/℃ Operating and Storage Range Maximum Lead Sold...