20NE06L

® STB20NE06L N - CHANNEL 60V - 0.06Ω - 20A TO-263 STripFET™ POWER MOSFET TYPE STB20NE06L s s s s s s V DSS 60 V R DS(on) < 0.07 Ω ID 20 A TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt Ts tg Tj June 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o Value 60 60 ± 20 20 14 80 70 0.47 7 -65 to 175 175 ( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/8 () Pulse width limited by safe operating area Free Datasheet http://www.datasheet4u.net/ STB20NE06L THE...