2SJ659

Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.65 40 150 --55 to +150 85 --14 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=500µH, IAV=--14A *2 L≤500µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-60V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-7A ID=--7A, VGS=-10V ID=--7A, VGS=-4V Ratings min --60 --1 ±10 --1.2 7 12 102 147 133 206 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : J659 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...