P-Channel Silicon MOSFET
Ordering number : EN8584
2SJ659
P-Channel Silicon MOSFET
2SJ659
Features
• • • • •
General-Purpose Switching Device ...
Description
Ordering number : EN8584
2SJ659
P-Channel Silicon MOSFET
2SJ659
Features
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.65 40 150 --55 to +150 85 --14 Unit V V A A W W °C °C mJ A
Note : *1 VDD=30V, L=500µH, IAV=--14A *2 L≤500µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-60V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-7A ID=--7A, VGS=-10V ID=--7A, VGS=-4V Ratings min --60 --1 ±10 --1.2 7 12 102 147 133 206 --2.6 typ max Unit V
µA µA
V S mΩ mΩ
Marking : J659
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...
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