J659 Datasheet: P-Channel Silicon MOSFET





J659 P-Channel Silicon MOSFET Datasheet

Part Number J659
Description P-Channel Silicon MOSFET
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download J659 Datasheet PDF

Features: Ordering number : EN8584 2SJ659 P-Chan nel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switc hing Device Applications Low ON-resist ance. Ultrahigh-speed switching. 4V dri ve. Motor drive, DC / DC converter. Ava lanche resistance guarantee. Specifica tions Absolute Maximum Ratings at Ta=25 °C Parameter Drain-to-Source Voltage G ate-to-Source Voltage Drain Current (DC ) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storag e Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol V DSS VGSS ID IDP PD Tch Tstg EAS IAV PW 10µs, duty cycle≤1% Tc=25°C Condi tions Ratings --60 ±20 --14 --56 1.65 40 150 --55 to +150 85 --14 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=500µH, IAV=--14A *2 L≤500µH, Sing le pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Bre akdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Sy.

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Ordering number : EN8584
2SJ659
2SJ659
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=500µH, IAV=--14A
*2 L500µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--14
--56
1.65
40
150
--55 to +150
85
--14
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : J659
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS= ±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--7A
ID=--7A, VGS=--10V
ID=--7A, VGS=--4V
min
--60
--1.2
7
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
12 S
102 133 m
147 206 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA MS IM TB-00001072 No.8584-1/4
Free Datasheet http://www.datasheet4u.net/

           






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