J649 Datasheet: 2SJ649





J649 2SJ649 Datasheet

Part Number J649
Description 2SJ649
Manufacture NEC
Total Page 8 Pages
PDF Download Download J649 Datasheet PDF

Features: www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION Th e 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO -220 FEATURES • Low on-state resista nce: RDS(on)1 = 48 mΩ MAX. (VGS = – 10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) • Bui lt-in gate protection diode (Isolated T O-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain C urrent (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 V V A A W W °C °C A mJ m 20 m 20 m 70 25 2 .0 150 –55 to +150 –20 40 Total Po wer Dissipation (TC = 25°C) Total Powe r Dissipation (TA = 25°C) Channel Temp erature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS E.

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ649
Isolated TO-220
FEATURES
Low on-state resistance:
RDS(on)1 = 48 mMAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 75 mMAX. (VGS = –4.0 V, ID = –10 A)
Low input capacitance:
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
–60
m 20
m 20
m 70
25
V
V
A
A
W
Total Power Dissipation (TA = 25°C)
PT 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS –20 A
EAS 40 mJ
(Isolated TO-220)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002
Free Datasheet http://www.datasheet4u.net/

                    
  






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