J649

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220 FEATURES Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 V V A A W W °C °C A mJ m 20 m 20 m 70 25 2.0 150 –55 to +150 –20 40 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16332EJ1V0DS00 (1st edition) Date Published May 2003 NS CP(K) Printe...