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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The ...
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ649
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect
Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ649 PACKAGE Isolated TO-220
FEATURES
Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) Built-in gate protection diode (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
–60
V V A A W W °C °C A mJ
m 20 m 20 m 70
25 2.0 150 –55 to +150 –20 40
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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Document No. D16332EJ1V0DS00 (1st edition) Date Published May 2003 NS CP(K) Printe...