PHT6N06T
TrenchMOS™ standard level FET
M3D087
Rev. 02 — 03 February 2003
Product data
1. Product profile
1.1 Descri...
PHT6N06T
TrenchMOS™ standard level FET
M3D087
Rev. 02 — 03 February 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHT6N06T in SOT223.
1.2 Features
s Low on-state resistance s Fast switching
s Low QGD s Surface mounting package.
1.3 Applications
s DC to DC converters
s General purpose switching.
1.4 Quick reference data
s VDS ≤ 55 V s Ptot ≤ 8.3 W
s ID ≤ 5.5 A s RDSon ≤ 150 mΩ
2. Pinning information
Table 1: Pin 1 2 3 4
Pinning - SOT223, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
4
source (s)
drain (d)
Symbol
d
g
MBB076
s
1
2
3
Top view
MSB002 - 1
SOT223
Philips Semiconductors
PHT6N06T
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS VDGR VGS ID
drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tsp = 25 °C
ISM
peak source (diode forward) current Tsp = 25 ...