Document
Transistors with built-in Resistor
UNR921xJ Series (UN921xJ Series)
Silicon NPN epitaxial planar type
Unit: mm
1.60+0.05 –0.03 1.00±0.05
0.80±0.05
For digital circuits ■ Features
• Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • SS-Mini type package, allowing automatic insertion through tape packing.
0.12+0.03 –0.01
3
1.60±0.05
0.85+0.05 –0.03
1 0.27±0.02
2
(0.50)(0.50)
Marking Symbol (R1) • UNR9210J (UN9210J) 8L 47 kΩ • UNR9211J (UN9211J) 8A 10 kΩ • UNR9212J (UN9212J) 8B 22 kΩ • UNR9213J (UN9213J) 8C 47 kΩ • UNR9214J (UN9214J) 8D 10 kΩ • UNR9215J (UN9215J) 8E 10 kΩ • UNR9216J (UN9216J) 8F 4.7 kΩ • UNR9217J (UN9217J) 8H 22 kΩ • UNR9218J (UN9218J) 8I 0.51 kΩ • UNR9219J (UN9219J) 8K 1 kΩ • UNR921AJ 8X 100 kΩ • UNR921BJ 8Y 100 kΩ • UNR921CJ 8Z • UNR921DJ (UN921DJ) 8M 47 kΩ • UNR921EJ (UN921EJ) 8N 47 kΩ • UNR921FJ (UN921FJ) 8O 4.7 kΩ • UNR921KJ (UN921KJ) 8P 10 kΩ • UNR921LJ (UN921LJ) 8Q 4.7 kΩ • UNR921MJ EL 2.2 kΩ • UNR921NJ EX 4.7 kΩ • UNR921TJ (UN921TJ) EZ 22 kΩ • UNR921VJ FD 2.2 kΩ
(R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 100 kΩ 47 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ
5˚
0.70+0.05 –0.03
■ Resistance by Part Number
0 to 0.02
(0.80)
5˚
1: Base 2: Emitter 3: Collector EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R1 B R2 E C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 −55 to +125 Unit V V mA mW °C °C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004 SJH00039BED
0.10 max.
(0.375)
1
Free Datasheet http://www.datasheet4u.net/
UNR921xJ Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) Collector-emitter cut-off current (Base open) Emitterbase cut-off UNR9210J/9215J/ 9216J/9217J/921BJ UNR9213J/921AJ Symbol VCBO VCEO ICBO ICEO IEBO
Transistors with built-in Resistor
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0
Min 50 50
Typ
Max
Unit V V µA µA mA
0.1 0.5 0.01 0.1 0.2 0.5 1.0 1.5 2.0
current UNR9212J/9214J/921DJ/ (Collector 921EJ/921MJ/921NJ/921TJ open) UNR9211J UNR921FJ/921KJ UNR9219J UNR9218J/921CJ/921LJ/921VJ Forward current transfer ratio UNR921VJ UNR9218J/921KJ/921LJ UNR9219J/921DJ/921FJ UNR9211J UNR9212J/921EJ UNR9213J/9214J/921AJ/ 921CJ/921MJ UNR921NJ/921TJ UNR9210J/9215J/9216J/ 9217J/921BJ Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR9213J/921BJ/921KJ UNR921DJ UNR921EJ UNR921AJ Transition frequency Input UNR9218J fT R1 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ VCC = 5 V, VB = 10 V, RL = 1 kΩ VCC = 5 V, VB = 6 V, RL = 1 kΩ VCC = 5 V, VB = 5 V, RL = 1 kΩ VCB = 10 V, IE = −2 mA, f = 200 MHz −30% 150 0.51 1 2.2 4.7 10 22 47 100 4.9 hFE VCE = 10 V, IC = 5 mA 6 20 30 35 60 80 80 160
20
400 460 0.25 V V 0.2 V
MHz +30% kΩ
resistance UNR9219J UNR921MJ/921VJ UNR9216J/921FJ/921LJ/921NJ UNR9211J/9214J/9215J/921KJ UNR9212J/9217J/921TJ UNR9210J/9213J/921DJ/921EJ UNR921AJ/921BJ
2
SJH00039BED
Free Datasheet http://www.datasheet4u.net/
Transistors with built-in Resistor
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter Emitter-base resistance UNR921CJ Rasistance UNR921MJ ratio UNR921NJ UNR9218J/9219J UNR9214J UNR921TJ UNR921FJ UNR921AJ/921VJ UNR9211J/9212J/9213J/921LJ UNR921KJ UNR921EJ UNR921DJ 0.8 1.70 1.70 3.7 0.37 0.08 0.17 Symbol R2 R1/R2 Conditions Min
UNR921xJ Series
Typ 47 0.047 0.1 0.10 0.21 0.47 0.47 1.0 1.0 2.13 2.14 4.7
Max +30%
Unit kΩ
−30%
0.12 0.25
0.57
1.2 2.60 2.60 5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
150
Total power dissipation PT (mW)
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR9210J IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C
102
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
300 Ta = 75°C 25°C 200 −25°C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75°C 25°C 10 −1 −25°C 10 −2 10 −1
20
10
0
0
2
4
6
8
10
12
0
1 10 102
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00039BED
3
Free Datasheet http://www.datasheet4u.net/
UNR921xJ Series
Cob VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
6 f = 1 MHz IE = 0 Ta = 25°C
104
Transisto.