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HGTP15N40C1 Dataheets PDF



Part Number HGTP15N40C1
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet HGTP15N40C1 DatasheetHGTP15N40C1 Datasheet (PDF)

HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Descrip.

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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G20N40C1 G20N40E1 G20N50C1 G20N50E1 G15N40C1 G15N40E1 G15N50C1 G15N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1 HGTH20N50C1 HGTH20N40E1 HGTH20N50E1 Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . VCGR 400 500 Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.) -5 -5 Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE ±20 ±20 Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC 20 20 Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 35 35 Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD 100 100 Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . 0.8 0.8 Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150 -55 to +150 Absolute Maximum Ratings HGTP15N40C1 HGTP15N40E1 400 400 -5 ±20 15 35 75 0.6 -55 to +150 HGTP15N50C1 HGTP15N50E1 UNITS 500 V 500 V -5 V ±20 V 15 A 35 A 75 W 0.6 W/oC oC -55 to +150 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 2174.3 3-61 Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH20N40C1, E1, HGTP15N40C1, E1 PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Collector Current SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 1mA, VGE = 0 VGE = VCE, IC = 1mA VCE = 400V, TC = +25oC VCE = 500V, TC = +25oC VCE = 400V, TC = +125oC MIN 400 MAX HGTH20N50C1, E1, HGTP15N50C1, E1 MIN 500 MAX UNITS V 2.0 - 4.5 250 1000 100 -5 2.0 - 4.5 250 1000 100 -5 V µA µA µA µA nA mA VCE = 500V, TC = +125oC Gate-Emitter Leakage Current Reverse Collector-Emitter Leakage Current Collector-Emitter on Voltage IGES ICE VCE(ON) VGE = ±20V, VCE = 0 RGE = 0Ω, VEC = 5V IC = 20A, VGE = 10V IC = 35A, VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 40E1, 50E1 40C1, 50C1 Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) 40E1, 50E1 40C1, 50C1 Thermal Resistance Junction-to-Case RθJC HGTH, HGTM HGTP WOFF IC = 10A, VCE(CLP) = 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI IC = 10A, VCE = 10V IC = 10A, VCE = 10V IC = 20A, VCE(CLP) = 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω - 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 - 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 V V V nC ns ns ns 680 (Typ) 400 1000 500 680 (Typ) 400 1000 500 ns ns 1810 (Typ) 1070 (Typ) 1.25 1.67 1.25 1.67 µJ µJ oC/W oC/W INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 3-62 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves 40 VGE = 10V, RGEN = RGS = 50Ω ICE, COLLECTOR CURRENT (A) RATED POWER DISSIPATION (%) -50 -25 0 +25 +50 +75 +100 +125 +150 +175 35 30 25 20 15 10 5 0 -75 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25Ω, VGE = 0V ARE THE MIN. ALLOWABLE VALUES FIGURE 2. POWER DISSIPATION vs .


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