HGTP1N120BN

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49316. Features 5.3A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical EOFF . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC Short Circuit Rating Low Conduction Loss Avalanche Rated Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.fairchildsemi.com Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTD1N120BNS HGTP1N120BN PACKAGE TO-252AA TO-220AB BRAND 1N120B 1N120BN Packaging JEDEC TO-220AB E C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A COLLECTOR (FLANGE) Symbol C G JEDEC TO-252AA COLLECTOR (FLANGE) E G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF TH...