STK0460F

Semiconductor STK0460F Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=7.5pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Type NO. STK0460F Marking STK0460 Package Code TO-220F-3L Ordering Information Outline Dimensions Φ3.05~3.35 9.80~10.20 unit : mm 2.60~3.00 15.40~15.80 12.20~12.60 9.10~9.30 12.40~13.00 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 1 2 3 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gate 2. Drain 3. Source KSD-T0O005-000 1 Free Datasheet http://www.datasheet4u.net/ STK0460F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 4 2.2 16 25 4 150 4 7 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 5.0 62.5 Unit ℃/W KSD-T0O005-000 2 Free Datasheet http://www.datasheet4u.net/ STK0460F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source lea...