HGTP20N35G3VL

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS April 1995 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = 175oC Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING AVAILABILITY PART NUMBER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-220AB T0-262AA T0-263AB BRAND 20N35GVL 20N35GVL 20N35GVL COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB M A A COLLECTOR (FLANGE) A GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. The development type number for this device is TA49076. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 ±10 26 18 775 150 1.0 -40 to +175 260 6 Collector-Emitter B...