2SD1918
NPN 1.5A 160V Middle Power Transistor
Parameter
VCEO IC
Value
160V 1.5A
lFeatures 1) Suitable for Middle Powe...
2SD1918
NPN 1.5A 160V Middle Power
Transistor
Parameter
VCEO IC
Value
160V 1.5A
lFeatures 1) Suitable for Middle Power Driver 2) Complementary
PNP Types : 2SB1275 3) High voltage : VCEO=160V
4) Lead Free/RoHS Compliant.
lOutline
CPT3
Collector
Base
Emitter
2SD1918 (SC-63)
Datasheet
lInner circuit
Collector
Base
Emitter
lApplications Motor driver , LED driver Power supply
lPackaging specifications
Part No.
Package
2SD1918
CPT3
Package size (mm)
6595
Taping code
TL
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
330
16
2,500
Marking D1918
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2013.07 - Rev.D
2SD1918
Data Sheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulsed
Power dissipation
Junction temperature
Range of storage temperature *1 Pw=20ms , duty=1/2 *2 Mounted on a substrate *3 Tc=25°C
Symbol
VCBO VCEO VEBO
IC ICP *1 PD *2 PD *3
Tj Tstg
Values
Unit
160
V
160
V
5
V
1.5
A
3.0
A
1
W
10
W
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Collector-emitter breakdown voltage
BVCEO IC = 1mA
160
Collector-base breakdown voltage
BVCBO IC = 50mA
160
Emitter-base breakdown voltage
BVEBO IE = 50mA
5
Collector cut-off current
ICBO VCB = 120V
-
Emitter cut-off current Collector-emitter saturation voltage DC current gain
Transition frequency
...
