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HGTP3N60B3D Dataheets PDF



Part Number HGTP3N60B3D
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet HGTP3N60B3D DatasheetHGTP3N60B3D Datasheet (PDF)

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used.

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