A5888

A5888 Silicon PNP transistor epitaxial type A5888 [ Applications ] Charging circuits, DC-DC converters, MOSFET gate drivers Motor control, Power switches [ Feature ] Very low collector saturation voltage VCE(sat)= -60mV (Max.) at IC= -1A, IB= -0.1A [ Absolute maximum ratings (Ta=25C) ] Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Junction temperature Storage temperature Symbol Maximum ratings VCBO -50 VCEO -40 VEBO -7.5 IC -5.5 IC -15 Tj 150 Tstg -55 to 150 Unit V V V A A C C [ Electrical characteristics (Ta=25C) ] Characteristic Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 1 DC current gain 2 DC current gain 3 DC current gain 4 Collector-emitter saturation voltage 1 Collector-emitter saturation voltage 2 Collector-emitter saturation voltage 3 Collector-emitter saturation voltage 4 Collector-emitter saturation voltage 5 Collector-emitter saturation voltage 6 Collector-emitter saturation voltage 7 Collector-emitter saturation voltage 8 Base-emitter saturation voltage 1 Base-emitter saturation voltage 2 Base-emitter on voltage 1 Base-emitter on voltage 2 Transition frequency Collector output capacitance Turn on time 1 Turn off time 1 Turn on time 2 Turn off time 2 Symbol BVCBO BVCES BVCEO BVEBO ICBO ICES IEBO ...