6690AS Datasheet PDF Download, Fairchild Semiconductor





(PDF) 6690AS Datasheet Download

Part Number 6690AS
Description 2S6690AS
Manufacture Fairchild Semiconductor
Total Page 8 Pages
PDF Download Download 6690AS Datasheet PDF

Features: FDS6690AS 30V N-Channel PowerTrench® Sy ncFET™ May 2008 FDS6690AS 30V N-Cha nnel PowerTrench® SyncFET™ General D escription The FDS6690AS is designed to replace a single SO-8 MOSFET and Schot tky diode in synchronous DC:DC power su pplies. This 30V MOSFET is designed to maximize power conversion efficiency, p roviding a low RDS(ON) and low gate cha rge. The FDS6690AS includes an integrat ed Schottky diode using Fairchild’s m onolithic SyncFET technology. The perfo rmance of the FDS6690AS as the low-side switch in a synchronous rectifier is c lose to the performance of the FDS6690A in parallel with a Schottky diode. tm Features • 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 m Ω @ VGS = 4.5 V • • • Includes SyncFET Schottky diode Low gate charge (16nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capab ility Applications • DC/DC converter • Low side notebooks D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum R.

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May 2008
FDS6690AS
30V N-Channel PowerTrench® SyncFET
tm
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6690AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
Applications
DC/DC converter
Low side notebooks
Features
10 A, 30 V. RDS(ON) max= 12 m@ VGS = 10 V
RDS(ON) max= 15 m@ VGS = 4.5 V
Includes SyncFET Schottky diode
Low gate charge (16nC typical)
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690AS
FDS6690AS
13’’
54
63
72
81
Ratings
30
±20
10
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6690AS Rev A2(X)
Free Datasheet http://www.Datasheet-PDF.com/

                    
  






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