2SJ652
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Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device ...
Description
www.DataSheet4U.com
Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
Package Dimensions
unit : mm 2063A
[2SJ652]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
4.5 2.8
18.1
16.0
5.6
14.0
1.6 1.2 0.75
2.4 0.7
2.55
1 2 3 2.55
2.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings --60 ±20 --28 --112 2.0 30 150 --55 to +150 Unit V V A A W W °C °C
2.55
2.55
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-14A Ratings min --60 --1 ± 10 -1.2 18 26 --2.6 typ max Unit V µA µA V S
Marking : J652
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose fail...
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