2PG009

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)  Package  Code TO-220D-A1  Marking Symbol: 2PG009  Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively. T ≤ 5.0 µs, On-duty ≤ 20%  Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Symbol VCES ICES IGES on tin Collector-emitter cutoff current (E-B short) * VGE(th) –VCE Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Short-circuit input capacitance (Common emitter) Short-circuit output capacitance (Common emitter) Reverse transfer capacitance (Common emitter) Gate charge load Gate-emitter charge Gate-collector charge Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance (ch-c) Thermal resistance (ch-a) te na Collector-emitter reverse break down voltage nc e Collector-emitter satur...