SEMICONDUCTOR
TTA1943
Silicon PNP triple diffusion planar transistor -15A/-230V/150W
RoHS RoHS
Nell High Power Produc...
SEMICONDUCTOR
TTA1943
Silicon
PNP triple diffusion planar
transistor -15A/-230V/150W
RoHS RoHS
Nell High Power Products
20.00±0.20 18.00
ø3.30 ± 0.20
5.00
3.00
2.00 9.00
4.00
6.00 20.50 26.00
TO-3PL
3.00 2.50 (typ.)
FEATURES
High-speed switching High collector-emitter voltage: VCEO = -230V(min) Complementary to TTC5200 TO-3PL package which can be installed to the heat sink with one screw
1.00 (typ.)
2.50
0.60 5.45 ± 0.05 3.20
5.45 ± 0.05
1
2
3
C (2)
1. BASE 2. COLLECTOR (HEAT SINK)
APPLICATIONS
Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage
3. EMITTER
B (1)
PNP
E (3)
All dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current, tp ≤ 5ms Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE -230 -230 -5 -15 A -30 -1.5 150 150 ºC -55 to 150 W V UNIT
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SEMICONDUCTOR
TTA1943
RoHS RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL ICBO I EBO V (BR)CEO V CBO V EBO h FE PARAMETER Collector cutoff current Emitter cutoff current Collector to emitter breakdown voltage Collector to base voltage Emitter to base voltage Forward current transfer ratio (DC current gain) Collector to emitter voltage Base to emitter voltage Transition frequency ...