P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED4311/CEU4311
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-2...
