UAA3536HN multi-band transceiver Datasheet

UAA3536HN Datasheet, PDF, Equivalent


Part Number

UAA3536HN

Description

Low power GSM/DCS/PCS multi-band transceiver

Manufacture

Philips

Total Page 30 Pages
Datasheet
Download UAA3536HN Datasheet


UAA3536HN
INTEGRATED CIRCUITS
DATA SHEET
UAA3536HN
Low power GSM/DCS/PCS
multi-band transceiver
Objective specification
File under Integrated Circuits, ICXX
2001 September 19
Free Datasheet http://www.datasheet-pdf.com/

UAA3536HN
Philips Semiconductors
Low power GSM/DCS/PCS multi-band
transceiver
Objective specification
UAA3536
FEATURES
Multiple band application for GSM, DCS and PCS cellular phone systems
Compliant to GPRS class 12 operation
Compliant to EDGE RX operation
Low noise and wide dynamic range low IF receiver
More than 35 dB on chip image rejection in receive
More than 84 dB gain control range in receive
Integrated channel filter
Integrated TX filters
High precision IQ modulator
Multi-Band Tx modulation loop architecture including offset mixer and phase-frequency detector
Fully integrated fractional N RF synthesiser with AFC control possibility
Fully integrated RF VCO with integrated supply regulator
Semi integrated reference oscillator with integrated coarse AFC possibility and with integrated supply regulator
Two outputs to control RF frontend switches (pin diodes)
Fully differential design minimizing cross-talk and spurs
Functional down to 2.4 V and up to 3.3 V
3-wire serial bus interface
HVQFN40 package
APPLICATIONS
GSM 900 MHz, DCS 1800 MHz and PCS 1900 MHz hand-held transceivers.
GENERAL DESCRIPTION
The UAA3536 integrates the receiver and most of the transmitter section of GSM, DCS and PCS hand-held transceiver.
The receiver consists of two distinct parts. First, the RF receiver front-end which amplifies the GSM, DCS or PCS aerial
signal, converts the chosen channel down to a low IF of 100 kHz, and provides in addition more than 35 dB image
suppression. The frontend gain is switchable by one 20dB gain step. Some selectivity is provided at this stage by an
on-chip low-pass filter, and channel selectivity is provided by means of a high performance integrated band-pass filter.
Then, the IF section further amplifies the wanted channel, performs gain control to tune the output level to the desired
value and rejects DC. The IF gain can be varied over a range of 68 dB.
The transmitter consists of a closed loop modulation architecture. The down converted feedback RF transmit signal is
mixed with the IQ modulation signals. In a phase frequency detector it is compared with the LO signal divided down to
about 60 or 114 MHz and drives the charge pump for the external TX VCO.
The local oscillators (LO) signals required are provided by an on chip VCO for operation of the RF section. The
frequencies of the RF VCO are set by an internal fractional N synthesiser PLL circuit, which are programmable via a
3-wire serial bus. Comparison frequency is 26 MHz (12 Hz step programmability) derived from the 26 MHz reference
signal which is generated with the semi integrated reference oscillator. The quadrature phase RF LO signals required for
IQ mixers in reception are generated internally. The reference oscillator can be without frequency control. In this case
the precise receive and transmit frequencies have to be programmed via the fractional N synthesiser. A coarse AFC
control is possible via programmable switched capacitors.
Two outputs are available to control external RF frontend switches, e.g. used for band selection.
2001 September 19
2
Free Datasheet http://www.datasheet-pdf.com/


Features INTEGRATED CIRCUITS DATA SHEET UAA3536 HN Low power GSM/DCS/PCS multi-band tra nsceiver Objective specification File under Integrated Circuits, ICXX 2001 Se ptember 19 Free Datasheet http://www.d atasheet-pdf.com/ Philips Semiconducto rs Objective specification Low power GSM/DCS/PCS multi-band transceiver FEA TURES • Multiple band application for GSM, DCS and PCS cellular phone system s • Compliant to GPRS class 12 operat ion • Compliant to EDGE RX operation • Low noise and wide dynamic range lo w IF receiver • More than 35 dB on ch ip image rejection in receive • More than 84 dB gain control range in receiv e • Integrated channel filter • Int egrated TX filters • High precision I Q modulator • Multi-Band Tx modulatio n loop architecture including offset mi xer and phase-frequency detector • Fu lly integrated fractional N RF synthesi ser with AFC control possibility • Fu lly integrated RF VCO with integrated s upply regulator UAA3536 • Semi integrated reference oscillator with integrated coarse AFC.
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