NTB6N60

NTP6N60, NTB6N60 Preferred Device Advance Information Power MOSFET 6 Amps, 600 Volts N–Channel TO–220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features http://onsemi.com Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits 6 AMPERES 600 VOLTS RDS(on) = 1200 mΩ N–Channel D Typical Applications G 4 S 1 Unit Vdc Vdc Vdc VGS VGSM ID ID IDM PD TJ, Tstg EAS "20 "40 Adc – Continuous – Continuous @ 100°C – Single Pulse (tpv10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 V, VGS = 10 Vdc, IL = 6 A, L = 25 mH, RG = 25 Ω) Thermal Resistance – Junction–to–Case – Junction–to–Ambient – Junction–to–Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 6.0 4.8 21 142 1.14 –55 to 150 450 Watts W/°C °C mJ Drain NTP6N60 LLYWW Gate Source Gate Drain Source 1 2 TO–220AB CASE 221A STYLE 5 3 2 3 D2PAK CASE 418B STYLE 2 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Non–Repetitive (tpv10 ms) Drain Symbol VDSS VDGR Value 600 600 MARKING DIAGRAMS AND PIN ASSIGNMENTS Dra...