2SD1875

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR „ FEATURES NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Ordering Number Package Lead Free Halogen Free 2SD1875L-x-T92-B 2SD1875G-x-T92-B TO-92 2SD1875L-x-T92-K 2SD1875G-x-T92-K TO-92 2SD1875L-x- T92-R 2SD1875G-x- T92-R TO-92 2SD1875L-x-T9N-B 2SD1875G-x-T9N-B TO-92NL 2SD1875L-x-T9N-K 2SD1875G-x-T9N-K TO-92NL Note: Pin Assignment E: EMITTER C: COLLECTOR B: BASE www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD 1 of 2 QW-R201-057,D Free Datasheet http://www.datasheet-pdf.com/ 2SD1857 „ PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector power dissipation Collector current Collector current SYMBOL VCBO VCEO VEBO PC IC ICP NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) RATINGS 120 120 5 1 2 3 UNIT V V V W A A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25℃) MIN 120 120 5 TYP MAX UNIT V V V µA µA V MHz pF PARAMETER SYM...