Document
MWI 100-06 A8
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13, 21
IC25 = 130 A = 600 V VCES VCE(sat) typ. = 2.0 V
Preliminary data
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5 6
9 10 19 17 15
3 4 14, 20
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IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 130 88 ICM = 200 VCEK ≤ VCES 10 410 V V A A A µs W
Features
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VCE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C non-repetitive TC = 25°C
NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
Advantages
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Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.9 400 25 11 150 30 1.0 2.9 4.3 340 2.5 6.5 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.3 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
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VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125°C VCE = 300 V; IC = 100 A VGE = ±15 V; RG = 2.2 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 125 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
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Free Datasheet http://www.datasheet-pdf.com/
340
MWI 100-06 A8
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 140 88 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 1.9 1.4 28 100 2.1 V V A ns 0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.1 V; R0 = 12 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.15 V; R0 = 2.5 mΩ Thermal Response
Conditions operating
Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm
IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions
IGBT (typ.) Cth1 = 0.232 J/K; Rth1 = 0.223 K/W Cth2 = 1.504 J/K; Rth2 = 0.077 K/W Free Wheeling Diode (typ.) Cth1 = 0.138 J/K; Rth1 = 0.48 K/W Cth2 = 0.957 J/K; Rth2 = 0.13 K/W
Characteristic Values min. typ. max. 1.8 mΩ mm mm 0.01 300 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
10 10
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2-2
Free Datasheet http://www.datasheet-pdf.com/
340
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