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FGA20S140P Dataheets PDF



Part Number FGA20S140P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Shorted Anode IGBT
Datasheet FGA20S140P DatasheetFGA20S140P Datasheet (PDF)

FGA20S140P — 1400 V, 20 A Shorted-anode IGBT September 2013 FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device.

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FGA20S140P — 1400 V, 20 A Shorted-anode IGBT September 2013 FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. C GCE TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward Current @ TC = 100oC PD Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Limited by Tjmax G E Ratings 1400 ±25 40 20 60 40 20 272 136 -55 to +175 -55 to +175 300 Typ. --- Max. 0.55 40 Unit V V A A A A A W W oC oC oC Unit oC/W oC/W ©2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 1 www.fairchildsemi.com FGA20S140P — 1400 V, 20 A Shorted-anode IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size FGA20S140P FGA20S140P TO-3PN - Tape Width - Quantity 30 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current VCE = 1400, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage VFM Diode Forward Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V TC = 25oC IC = 20A, VGE = 15V, TC = 125oC IC = 20A, VGE = 15V, TC = 175oC IF = 20A, TC = 25oC IF = 20A, TC = 175oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characcteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 20A, VGE = 15V - - 1 mA - - ±500 nA 4.5 6.0 7.5 - 1.9 2.4 - 2.1 - - 2.2 - 1.7 2.4 - 2.1 - V V V V V V - 1686 - 45 - 32 - pF pF pF - 20 - 245 - 400 - 130 - 0.76 - 0.56 - 1.32 - 21 - 301 - 420 - 356 - 0.95 - 1.39 - 2.34 - 203.5 - 10.8 - 84.6 - ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC ©2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 2 www.fairchildsemi.com FGA20S140P — 1400 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 160 TC = 25oC 140 VGE = 17V 120 20V 100 15V 12V Collector Current, IC [A] 80 60 10V 40 20 0 0.0 9V 8V 1.5 3.0 4.5 6.0 Collector-Emitter Voltage, VCE [V] 7.5 Figure 3. Typical Saturation Voltage Characteritics 120 Common Emitter 100 VGE = 15V TC = 25oC 80 TC = 175oC Collector Current, IC [A] 60 40 20 0 0.0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] Figure 5. Saturation Voltage vs. Case 5.0 3.5 Common Emitter VGE = 15V 3.0 40A Collector-Emitter Voltage, VCE [V] 2.5 20A 2.0 IC = 10A 1.5 1.0 25 50 75 100 125 150 Case Temperature, TC [oC] 175 Figure 2. Typical Saturation Voltage Characteristics 160 TC = 175oC 140 VGE = 20V 17V 15V 120 Collector Current, IC [A] 100 80 12V 60 10V 40 9V 20 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 100 Common Emitter VCE = 20V 80 TC = 25oC TC = 175oC 60 Collector Current, IC [A] 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. Vge 20 Common Emitter TC = 25oC 15 Collector-Emitter Voltage, VCE [V] 10 IC = 10A 20A 40A 5 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] ©2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 3 www.fairchildsemi.com FGA20S140P — 1400 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figur.


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