Document
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
September 2013
FGA20S140P
1400 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching • Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A • High Input Impedance • RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES VGES IC
ICM (1)
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current
@ TC = 25oC @ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation Maximum Power Dissipation
@ TC = 25oC @ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Notes: 1: Limited by Tjmax
G
E
Ratings
1400 ±25 40 20 60 40 20 272 136 -55 to +175 -55 to +175
300
Typ.
---
Max.
0.55 40
Unit
V V A A A A A W W oC oC
oC
Unit
oC/W oC/W
©2012 Fairchild Semiconductor Corporation
FGA20S140P Rev. C4
1
www.fairchildsemi.com
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGA20S140P
FGA20S140P
TO-3PN
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
ICES IGES
Collector Cut-Off Current G-E Leakage Current
VCE = 1400, VGE = 0V VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 20mA, VCE = VGE IC = 20A, VGE = 15V TC = 25oC IC = 20A, VGE = 15V, TC = 125oC IC = 20A, VGE = 15V, TC = 175oC IF = 20A, TC = 25oC IF = 20A, TC = 175oC
Dynamic Characteristics
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VCE = 30V, VGE = 0V, f = 1MHz
Switching Characcteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge
VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC
VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 175oC
VCE = 600V, IC = 20A, VGE = 15V
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5 - 1.9 2.4
- 2.1 -
- 2.2 - 1.7 2.4 - 2.1 -
V V
V
V V V
- 1686 - 45 - 32 -
pF pF pF
- 20 - 245 - 400 - 130 - 0.76 - 0.56 - 1.32 - 21 - 301 - 420 - 356 - 0.95 - 1.39 - 2.34 - 203.5 - 10.8 - 84.6 -
ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
©2012 Fairchild Semiconductor Corporation
FGA20S140P Rev. C4
2
www.fairchildsemi.com
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160 TC = 25oC
140
VGE = 17V 120
20V
100
15V 12V
Collector Current, IC [A]
80
60 10V
40
20
0 0.0
9V 8V
1.5 3.0 4.5 6.0 Collector-Emitter Voltage, VCE [V]
7.5
Figure 3. Typical Saturation Voltage Characteritics
120
Common Emitter
100
VGE = 15V TC = 25oC
80 TC = 175oC
Collector Current, IC [A]
60
40
20
0 0.0 1.0 2.0 3.0 4.0
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
5.0
3.5 Common Emitter VGE = 15V
3.0
40A
Collector-Emitter Voltage, VCE [V]
2.5
20A 2.0
IC = 10A 1.5
1.0 25
50 75 100 125 150 Case Temperature, TC [oC]
175
Figure 2. Typical Saturation Voltage Characteristics
160 TC = 175oC
140
VGE = 20V
17V
15V 120
Collector Current, IC [A]
100 80 12V
60 10V
40 9V
20 8V
0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
100 Common Emitter VCE = 20V
80 TC = 25oC TC = 175oC
60
Collector Current, IC [A]
40
20
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. Vge
20 Common Emitter TC = 25oC
15
Collector-Emitter Voltage, VCE [V]
10
IC = 10A
20A 40A
5
0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V]
©2012 Fairchild Semiconductor Corporation
FGA20S140P Rev. C4
3
www.fairchildsemi.com
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
Typical Performance Characteristics
Figur.