STU312D

Green Product S T U312D Oct 08 2008 S amHop Microelectronics C orp. Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 18A R DS (ON) ( m Ω ) Max ID -14A R DS (ON) ( m Ω ) Max 24 @ V G S = 10V 36 @ V G S = 4.5V D1 34 @ V G S = -10V 54 @ V G S = -4.5V D2 D1/D2 G1 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed a S ymbol V DS V GS 25 C 70 C IDM IS Tc= 25 C PD Tc= 70 C ID N-C hannel P-C hannel 30 24 18 15 50 10 11 7.7 -30 24 -14 -12 -50 -6 Unit V V A A A A Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange W C T J , T S TG -55 to 175 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 13.6 120 C /W C /W Free Datasheet http://www.datasheet-pdf.com/ S T U312D N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 24V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 8A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 10A Min Typ C Max Unit 30 1 V uA 100 uA 1 1.8 OFF CHAR ACT...