STW56NM60N

STW56NM60N N-channel 600 V, 0.05 Ω , 45 A TO-247 MDmesh™ II Power MOSFET Preliminary data Features Order code STW56NM60N ■ ■ ■ VDSS 600 V RDS(on) max < 0.06 Ω ID 45 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking 56NM60N Package TO-247 Packaging Tube STW56NM60N July 2011 Doc ID 15723 Rev 2 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Free Datasheet http://www.datasheet-pdf.com/ Contents STW56NM60N Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . ...