NE68518

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) NE68518 / 2SC5015 NPN SILICON RF TRANSISTOR FEATURES High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low voltage operation Low noise and high gain 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Ratings 9 6 2 30 150 150 −65 to +150 Unit V V V mA mW °C °C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10403EJ01V0DS (1st edition) (Previous No. P10394EJ2V0DS00) Date Published June 2003 CP(K) The mark shows major revi...