GFP740

Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 740 GFP 740 General description  These N-channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guranteed to withstand a specified level of energy in the breakdown avalanche mode of operation  All of these power MOSFETs are designed for applications such as switching convertors relay drivers. These types can be operated directly from integrated circuits. Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 400 10 ±20 520 125 -55 –150 1..67 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage 1 of 2 Free Datasheet http://www.datasheet-pdf.co Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 740 Parameter Gate threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate charge Gate-source charge Gate-drain charge Symbol V GS (th) I GSS I DSS R DS (on) C iss C oss C rss td (on) tr td (off) tf Qg Q gs Q gd Min 2.0 - Typ. 0.47 1250 300 80 15 25 52 25 41 6.5 23 Max 4.0 ...