72T02GH AP72T02GH Datasheet

72T02GH Datasheet, PDF, Equivalent


Part Number

72T02GH

Description

AP72T02GH

Manufacture

Advanced Power Electronics

Total Page 6 Pages
Datasheet
Download 72T02GH Datasheet


72T02GH
Advanced Power
Electronics Corp.
AP72T02GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T02GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
25V
9mΩ
62A
GD
S
TO-252(H)
GD
S
Rating
25
± 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
TO-251(J)
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
.
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62.5
110
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200807177
Free Datasheet http://www.datasheet-pdf.com/

72T02GH
AP72T02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
25 - - V
- 0.02 - V/
- 8 9 m
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=25V, VGS=0V
VDS=20V ,VGS=0V
VGS= ±20V
ID=30A
VDS=20V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
- 11 15 m
1 - 3V
- 42 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 13 21 nC
- 2.7 - nC
- 9 - nC
- 8 - ns
- 80 - ns
- 22 - ns
- 6 - ns
- 930 1490 pF
- 250 - pF
- 180 - pF
- 1.1 1.7 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=15A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 26 - ns
- 15 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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Features AP72T02GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistanc e ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MO SFET BVDSS RDS(ON) ID 25V 9mΩ 62A D escription Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi zed device design, low on-resistance an d cost-effectiveness. The TO-252 packag e is widely preferred for commercial-in dustrial surface mount applications and suited for low voltage applications su ch as DC/DC converters. The through-hol e version (AP72T02GJ) are available for low-profile applications. GD S TO-25 2(H) G D S TO-251(J) Absolute Maxi mum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TS TG TJ Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 Rat ing 25 ± 20 62 44 190 60 0.4 3 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power .
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