Document
Ordering number : ENN6654A
2SC5689
NPN Triple Diffused Planar Silicon Transistor
2SC5689
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• • • • •
Package Dimensions
unit : mm 2174A
[2SC5689]
16.0
5.0
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
0.8
2.1
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
5.45
Conditions
Ratings 1500 800 5 10 25 3.0 80 150 --55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 40 130 Unit µA mA V mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3147 / 82200 TS IM TA-3038 No.6654-1/4
F r e e
D a t a s h e e t
h t t p : /
2SC5689
Continued from preceding page.
Parameter DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Diode Forward Voltage Storage Time Fall Time Symbol hFE1 hFE2 VCE(sat) VBE(sat) VF tstg tf VCE=5V, IC=1A VCE=5V, IC=8A IC=7.2A, IB=1.8A IC=7.2A, IB=1.8A IEC=8A IC=5A, IB1=1A, IB2=--2A IC=5A, IB1=1A, IB2=--2A 0.1 Conditions Ratings min 15 4 7 3 1.5 2.0 3.0 0.2 V V V µs µs typ max Unit
Switching Time Test Circuit
IB1 OUTPUT IB2 RB + 470µF VCC=200V RL=40Ω + 100µF VBE= --2V
PW=20µs D.C.≤1% INPUT VR 50Ω
10 9
IC -- VCE
2.0A
1.8A 1.6A
1.4A 1.2A 1.0A 0.8A
12
IC -- VBE
VCE=5V
Collector Current, IC -- A
7 6 5 4 3 2 1 0 0 1 2 3 4 5 6
Collector Current, IC -- A
8
10
8
0.6A
0.4A
0.2A
6
2
IB=0
7 8 9 10
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT02419 IT02418 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1
Collector-to-Emitter Voltage, VCE -- V
100 7 5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
Ta= 1
4
20° C 25°C --40° C
VCE=5V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
IC / IB=5
DC Current Gain, hFE
3 2
12 Ta=
0°C
25° C
10 7 5 3 2
--40
°C
Ta= --
25°C
40°C
120°C
1.0 0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
10 IT02420
7
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
7 10 IT02421
No.6654-2/4
Free Datasheet http://www.datasheet-pdf.com/
2SC5689
10 7
SW Time -- IC
Switching Time, SW Time -- µs
tstg
VCC=200V IC / IB1=5 IB2 / IB1=2 R load
10 7 5 3 2
SW Time -- IB2
tst g
VCC=200V IC=5A IB1=1A R load
Switching Time, SW Time -- µs
5 3 2
tf
1.0 7 5 3 2
1.0 7 5 3 2
tf
0.1 0.1
2
3
5
7
1.0
2
3
5
100 7 5 3 2
Forward Bias A S O
ICP=25A
Collector Current, IC -- A
10 IT02422
7
0.1 0.1
2
3
5
7
1.0
2
3
5
100 7 5 3
Reverse Bias A S O
L=500µH IB2= --3A Tc=25°C Single pulse
Base Current, IB2 -- A
7 10 IT02423
10
Collector Current, IC -- A
Collector Current, IC -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IC=10A
P C =8
2 10 7 5 3 2 1.0 7 5 3 2
s 0µ
30
0W
10 ms
D C op er at io n
s 0µ
1m s
0.01 1.0
Tc=25°C Single pulse
2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
3.5
5 7 1000 IT02424
0.1 100
2
3
5
7
1000
2 IT02425
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
90 80
PC -- Tc
Collector Dissipation, PC -- W
3.0
Collector Dissipation, PC -- W
70 60 50 40 30 20 10 0
2.5
2.0
No
he
at
sin
k
1.5
1.0
0.5 0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT02389
Case Temperature, Tc -- °C
IT02426
No.6654-3/4
Free Datasheet http://www.datasheet-pdf.com/
2SC5689
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, a.