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C2705 Dataheets PDF



Part Number C2705
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SC2705
Datasheet C2705 DatasheetC2705 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications 2SC2705 Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage tem.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications 2SC2705 Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 5 50 5 800 150 −55 to 150 V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 150 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 1 mA, IB = 0 hFE (Note 2) VCE = 5 V, IC = 10 mA VCE (sat) VBE IC = 10 mA, IB = 1 mA VCE = 5 V, IC = 10 mA fT VCE = 5 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note 2: hFE classification O: 80 to 160, Y: 120 to 240 Marking C2705 Characteristics indicator Part No. (or abbreviation code) Lot No. Note 3 2SC2705 Min Typ. Max Unit ― ― 0.1 μA ― ― 0.1 μA 150 ― ― V 80 ― 240 ― ― 1.0 V ― ― 0.8 V ― 200 ― MHz ― 1.8 ― pF Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 Collector current IC (mA) IC – VCE 56 0.5 Common emitter 48 0.4 Ta = 25°C 40 0.3 32 0.2 24 16 IB = 0.1 mA 8 0 0 0 2 4 6 8 10 12 14 16 Collector-emitter voltage VCE (V) 1000 500 300 100 50 30 10 0.3 hFE – IC Common emitter VCE = 5 V Ta = 100°C 25 −25 1 3 10 Collector current IC (mA) 30 50 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (mA) 2SC2705 IC – VBE .


D2530 C2705 VC0342


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