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25N60N Dataheets PDF



Part Number 25N60N
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description FCH25N60N
Datasheet 25N60N Datasheet25N60N Datasheet (PDF)

FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features • RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Avalanche Tested • RoHS Compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentia.

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FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features • RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Avalanche Tested • RoHS Compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Application • Solar Inverter • AC-DC Power Supply D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation - Derate Above 25oC (TC = 25oC) (Note 3) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) - Continuous (TC = 25oC) FCH25N60N 600 ±30 25 16 75 861 8.3 2.2 100 20 216 1.72 -55 to +150 300 Unit V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds C C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. 1 FCH25N60N 0.58 40 Unit o C/W ©2011 Fairchild Semiconductor Corporation FCH25N60N Rev. C1 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ FCH25N60N — N-Channel SupreMOS® MOSFET Package Marking and Ordering Information Part Number FCH25N60N Top Mark FCH25N60N Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics Symbol TC = 25oC unless otherwise noted. Test Conditions Min. Typ. Max. Unit Parameter Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1 mA, VGS = 0 V,TJ = 25oC ID = 1 mA, Referenced to VDS = 480 V, TJ = 125oC VGS = ±30 V, VDS = 0 V VDS = 480 V, VGS = 0 V 25oC 600 0.74 10 100 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 12.5 A 2.0 0.108 4.0 0.126 V Ω Dynamic Characteristics Ciss Coss Crss Coss Coss(eff.) Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) f = 1 MHz VDS = 100 V, VGS = 0 V, f = 1 MHz VDS = 380 V, VGS = 0 V, f = 1 MHz VDS = 0 V to 480 V, VGS = 0 V VDS = 380 V, ID = 12.5 A, VGS = 10 V (Note 4) 2520 103 3.2 55 262 57 10 18 1 3352 137 5 74 - pF pF pF pF pF nC nC nC Ω - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380 V, ID = 12.5 A, VGS = 10 V, RG = 4.7 Ω (Note 4) - 21 22 68 5 52 54 146 20 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 8.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 25 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, ISD = 12.5 A VGS = 0 V, ISD = 12.5 A, dIF/dt = 100 A/μs - 370 7 25 75 1.2 - A A V ns μC ©2011 Fairchild Semiconductor Corporation FCH25N60N Rev. C1 2 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ FCH25N60N — N-Channel SupreMOS® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 100 VGS = 15V 10V 8V 6V 4V Figure 2. Transfer Characteristics 100 ID, Drain Current[A] ID, Drain Current[A] 10 25 C o 10 150 C o -55 C o 1 *Notes: 1. 250μs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250μs Pulse Test 0.3 0.05 0.1 1 10 VDS, Drain-Source Voltage[V] 30 1 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 350 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [mΩ], Drain-Source On-Resistance IS, Reverse Drain Current [A] 300 150 C o 250 10 25 C o.


2SK61 25N60N MCSC5018-2R7MU


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