APT65GP60L2DQ2

TYPICAL PERFORMANCE CURVES ® APT65GP60L2DQ2 APT65GP60L2DQ2G* APT65GP60L2DQ2 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff 100 kHz operation @ 400V, 54A 50 kHz operation @ 400V, 76A SSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT65GP60L2DQ2 UNIT Volts 600 ±30 @ TC = 25°C 198 96 250 250A @ 600V 833 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX Units 600 3 4.5 2.2 2.1 1250 µA nA 6-2005 Free Datasheet http://www.datasheet-pdf.com/ 6 2.7 Collector-Emitte...