PD - 97404
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switchi...
PD - 97404
INSULATED GATE BIPOLAR
TRANSISTOR Features
Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package
IRGP4063PbF IRGP4063-EPbF
C
VCES = 600V IC = 48A, TC = 100°C
G E
tSC ≥ 5μs, TJ(max) = 175°C
n-channel
C
VCE(on) typ. = 1.65V
Benefits
High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI
C
GC
E
TO-247AC IRGP4063PbF
E GC TO-247AD IRGP4063-EPbF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Max.
600 96 48
Units
V
h
c
144 192 ±20 ±30 330 170 -55 to +175
A A V W
°C
Thermal Resi...
