C4633

Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=1200V). · Small Cob (typical Cob=2.0pF). · Full-isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4633] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.7 14.0 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.55 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=1200V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1.5mA VCE=10V, IC=1.5mA IC=3mA, IB=0.6mA IC=3mA, IB=0.6mA IC=100µA, IE=0 IC=1mA, RBE=∞ IE=100µA, IC=0 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) Ratings Unit 1500 V 1200 V 5V 30 mA 100 mA 2W 150 ˚C –55 to +150 ˚C Ratings min typ 10 6 1500 1200 5 max 1 1 60 5 2 U...