Transistors
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2S...
Transistors
2SC2634
Silicon
NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2SA1127
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
■ Features
Low noise voltage NV
High forward current transfer ratio hFE
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
55
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
2.3±0.2
V
le sta ntinu Collector current
IC
100
mA
a e cyc isco Peak collector current
ICP
200
mA
life d, d Collector power dissipation
PC
400
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Collector-emitter voltage (Base open)
M is iscon ainte Emitter-base voltage (Collector open)
e/D e, m Base-emitter voltage
D anc typ Collector-base cutoff current (Emitter open)
inten ance Collector-emitter cutoffcurrent (Base open) Ma ten Forward current transfer ratio * main Collector-emitter saturation voltage ned Transition frequency (pla Noise voltage
VCBO VCEO VEBO VBE ICBO ICEO hFE VCE(sat)
fT NV
I...
