isc Silicon PNP Power Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -90V(Min)- BD750 = ...
isc Silicon
PNP Power
Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A
·High Power Dissipation ·Complement to Type BD751/751A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD750
-100
VCEV
Collector-Emitter Voltage
V
BD750A -130
BD750
-90
VCEO(SUS) Collector-Emitter Voltage
V
BD750A -120
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-20
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation@TC=25℃ 200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 0.875
UNIT ℃/W
BD750/750A
isc website:www.iscsemi.cn
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isc Silicon
PNP Power
Transistors
BD750/750A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD750 BD750A
IC= -30mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
BD750
IC= -7.5A; IB= -0.75A
BD750A IC= -5A; IB= -0.5A
VBE(sat)
Base-Emitter Saturation Voltage
BD750
IC= -7.5A; IB= -0.75A
BD750A IC= -5A; IB= -0.5A
ICEV
Collector Cutoff Current
BD750
VCEV= -100V;VBE(off)= -1.5V
BD750A
VCEV= -130V;VBE(off)= -...