ME4953 MOSFET Datasheet

ME4953 Datasheet, PDF, Equivalent


Part Number

ME4953

Description

Dual P-Channel 30V (D-S) MOSFET

Manufacture

Matsuki

Total Page 5 Pages
Datasheet
Download ME4953 Datasheet


ME4953
Dual P-Channel 30V (D-S) MOSFET
ME4953/ME4953-G
GENERAL DESCRIPTION
The ME4953 is the Dual P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and low in-line power loss are needed
in a very small outline surface mount package.
FEATURES
RDS(ON)60m@VGS=-10V
RDS(ON)90m@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
(SOP-8)
Top View
e Ordering Information: ME4953 (Pb-free)
ME4953-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
Tstg
RθJA
RθJC
Limit
-30
±20
-5.3
-4.3
-30
-1.7
2.0
1.3
-55 to 150
-55 to 150
T≦10 sec
47
Steady State
45
75
JuAlpy,r,22000087-V-Veerr43.0.0
Unit
V
V
A
A
A
W
℃/W
℃/W
01Free Datasheet http://www.datasheet-pdf.com/

ME4953
Dual P-Channel 30V (D-S) MOSFET
ME4953/ME4953-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ
STATIC
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
VDS=VGS, ID=-250μA
VDS=0V, VGS=±20V
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V
TJ=55
-1 -1.4
RDS(ON)
VSD
Drain-Source On-Resistance
Diode Forward Voltage
VGS=-10V, ID= -5.3A
VGS=-4.5V, ID= -4.2A
IS=-1.7A, VGS=0V
50
69
-0.8
DYNAMIC
Rg Gate resistance
Ciss Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=0V, VGS=0V, f=1MHz
VDS=-15V, VGS=0V, f=1.0MHz
3.5
450
70
20
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
ID=-5.3A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=-15V, RL =15
ID=-1.0A, VGEN=-10V
RG=6
Notes: a. Pulse test; pulse width 300us, duty cycle2%
14
4
3
27
11
40
4
Max Unit
-3
±100
-1
-25
V
nA
μA
60
mΩ
90
-1.2 V
490
pF
17
nC
33
15
ns
52
6
JuAlpy,r,22000087-V-Veerr43.0.0
02Free Datasheet http://www.datasheet-pdf.com/


Features ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transistors ar e produced using high cell density, DMO S trench technology. This high density process is especially tailored to minim ize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and low in-line power loss are needed in a very small outline surface mount packa ge. FEATURES ● RDS(ON)≦60mΩ@VGS= -10V ● RDS(ON)≦90mΩ@VGS=-4.5V ● Super high density cell design for ext remely low RDS(ON) ● Exceptional on-r esistance and maximum DC current capabi lity APPLICATIONS ● Power Management in Note book ● Portable Equipment Battery Powered System ● DC/DC Conv erter ● Load Switch ● DSC ● LCD D isplay inverter PIN CONFIGURATION (SO P-8) Top View e Ordering Information: ME4953 (Pb-free) ME4953-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unle.
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