ME4953-G

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦60mΩ@VGS=-10V ● RDS(ON)≦90mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter PIN CONFIGURATION (SOP-8) Top View e Ordering Information: ME4953 (Pb-free) ME4953-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in FR4 board with 2 oz copper 2 Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ Tstg RθJA RθJC TA=25℃ TA=70℃ Limit -30 ±20 -5.3 -4.3 -30 -1.7 2.0...