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MT29F4G16ABBDAH4 Dataheets PDF



Part Number MT29F4G16ABBDAH4
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F4G16ABBDAH4 DatasheetMT29F4G16ABBDAH4 Datasheet (PDF)

Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4, MT29F16G08AJADAWP Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – P.

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Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4, MT29F16G08AJADAWP Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks • Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V) • Array performance – Read page: 25µs 3 – Program page: 200µs (TYP: 1.8V, 3.3V)3 – Erase block: 700µs (TYP) • Command set: ONFI NAND Flash Protocol • Advanced command set – Program page cache mode4 – Read page cache mode 4 – One-time programmable (OTP) mode – Two-plane commands 4 – Interleaved die (LUN) operations – Read unique ID – Block lock (1.8V only) – Internal data move • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion • WP# signal: Write protect entire device • First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000 • RESET (FFh) required as first command after power-on • Alternate method of device initialization (Nand_Init) after power up (contact factory) • Internal data move operations supported within the plane from which data is read • Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles • Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP type 1, CPL 2 – 63-ball VFBGA Notes: 1. The ONFI 1.0 specification is available at www.onfi.org. 2. CPL = Center parting line. 3. See Program and Erase Characteristics for tR_ECC and tPROG_ECC specifications. 4. These commands supported only with ECC disabled. PDF: 09005aef83b25735 m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Free Datasheet http://www.datasheet-pdf.com/ Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 Micron Technology Product Family 29F = NAND Flash memory A B A D A WP IT ES :D Design Revision (shrink) Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualification sample Density 4G = 4Gb 8G = 8Gb 16G = 16Gb Special Options Blank X = Product longevity program (PLP) Device Width 08 = 8-bit 16 = 16-bit Operating Temperature Range Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) Level A = SLC Classification Mark Die B D J 1 2 4 nCE 1 1 2 RnB 1 1 2 I/O Channels 1 1 1 Speed Grade Blank Package Code WP = 48-pin TSOP 1 HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Operating Voltage Range A = 3.3V (2.7–3.6V) B = 1.8V (1.7–1.95V) Interface A = Async only Feature Set D = Feature set D PDF: 09005aef83b25735 m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Free Datasheet http://www.datasheet-pdf.com/ Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features Contents General Description ......................................................................................................................................... 8 Signal Descriptions ........................................................................................................................................... 8 Signal Assignments ........................................................................................................................................... 9 Package Dimensions ....................................................................................................................................... 12 Architectur.


MT29F4G16ABADAWP MT29F4G16ABBDAH4 MT29F4G16ABBDAHC


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