IPP80N06S2-08

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS® Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 7.7 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2-08 IPP80N06S2-08 IPI80N06S2-08 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-18830 SP0002-18826 SP0002-18828 Marking 2N0608 2N0608 2N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 80 80 320 450 ±20 215 -55 ... +175 55/175/56 mJ V W °C Unit A Rev. 1.0 page 1 2006-03-13 Free Datasheet http://www.datasheet-pdf.com/ IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gat...