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ELECTRONICS
ShenZhen YueFeiDa Electronics Technology Co., Ltd
Power MOSFET F30 mAmps, 50 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. • Energy Efficient • Miniature SOT–23 Surface Mount Package Saves Board Space • Pb-Free Package is available.
3 Drain
BSS84LT1G
SOT –23
1 Gate
-
Marking Diagram
2 Source
PD W
MAXIMUM RATINGS (T J = 25°C unless otherwise noted)
Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 50 ± 20 130 520 225 – 55 to 150 556 260 mW °C °C/W °C Unit Vdc Vdc mA
W = Work Week
ORDERING INFORMATION
Device BSS84LT1G BSS84LT3G Package SOT-23 SOT-23 Shipping 3000/Tape&Reel 10000/Tape&Reel
1/4
Feb-2012
Free Datasheet http://www.datasheet-pdf.com/
ELECTRONICS
ShenZhen YueFeiDa Electronics Technology Co., Ltd
BSS84LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2.) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD – – – – – 2.5 0.130 0.520 – V A (VDD = –15 15 Vdc, ID = –2.5 2.5 Adc, RL = 50 Ω) td(on) tr td(off) tf QT – – – – – 2.5 1.0 16 8.0 6000 – – – – – pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss – – – 30 10 5.0 – – – pF VGS(th) rDS(on) |yfs| 0.8 – 50 – 5.0 – 2.0 10 – Vdc Ohms mS V(BR)DSS IDSS – – – IGSS – – – – – 0.1 15 60 ±60 µAdc 50 – – Vdc µAdc Symbol Min Typ Max Unit
TYPICAL ELECTRICAL CHARACTERISTICS
0.6 I D , DDAIN CUDDENT (AMPS) 0.5 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 4 VDS = 10 V -55°C 25°C 0.5 0.45 I D , DDAIN CUDDENT (AMPS) 0.4 0.3 0.2 0.1 0 0.35 3.0 V 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10 0.2.