VRF157FL VRF157FLMP
50V, 600W, 80MHz
RF POWER VERTICAL MOSFET
The VRF157FL is a gold-metallized silicon n-channel RF po...
VRF157FL VRF157FLMP
50V, 600W, 80MHz
RF POWER VERTICAL MOSFET
The VRF157FL is a gold-metallized silicon n-channel RF power
transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. S
D
S
G
FEATURES
Improved Ruggedness V(BR)DSS = 170V 600W with 21dB Typical Gain @ 30MHz, 50V Excellent Stability & Low IMD Common Source Configuration Available in Matched Pairs Nitride Passivated Economical Flangeless Package Refractory Gold Metallization High Voltage Replacement for MRF157 RoHS Compliant
Maximum Ratings
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF157FL(MP) 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 16 2.9 3.6 4.4 Min 170 Typ 180 3.0 5.0 4.0 4.0 Max Unit V mA μA mhos V
Thermal Characteristics
Symbol RθJC RθJHS Characteristic J...